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Amplified spontaneous emission spectroscopy on semiconductor optical amplifiers subject to active light injection

 

作者: A. P. de Boer,   P. C. M. Christianen,   J. C. Maan,   Th. Rasing,   V. I. Tolstikhin,   T. G. van de Roer,   H. M. de Vrieze,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 23  

页码: 2936-2938

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121499

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It is shown that measurements of the effect of optical injection with an external laser on the spectral response of a semiconductor optical amplifier can probe intrinsic properties of a working device. The data demonstrate that under saturated gain conditions the carrier energy distribution within the active layer of a AlGaAs/GaAs amplifier neither shows spectral hole burning nor carrier heating, but only a decreased density. ©1998 American Institute of Physics.

 

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