A nonpolymer material, calixarene derivative (hexaacetatep‐methnylcalix[6]arene) was tested as a high‐resolution negative resist under an electron beam lithography process. It showed under 10‐mm resolution with little side roughness and high durability to halide plasma etching. A sub‐10‐nm Ge quantum wire was perfectly etched off without defects. Such a performance is suitable for nanoscale device processes. ©1996 American Institute of Physics.