Misfit dislocation multiplication processes in Si1−xGexalloys forx<0.15
作者:
C. G. Tuppen,
C. J. Gibbings,
M. Hockly,
S. G. Roberts,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 1
页码: 54-56
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102645
出版商: AIP
数据来源: AIP
摘要:
The density of misfit dislocation sources in strained Si1−xGexlayers grown on Si substrates is rarely sufficient to explain the observed extent of relaxation when layer thicknesses are in excess of the metastable critical thickness. This letter describes a process whereby a small, but finite number of misfit dislocation nucleation sources can lead to extensive strain relaxation across a complete wafer. Two novel mechanisms for misfit dislocation multiplication are presented and shown to be compatible with microscopic observations of chemically etched layers.
点击下载:
PDF
(435KB)
返 回