Determination of optical constants near the fundamental absorption edge in semiconductors
作者:
S. Mil'Shtein,
A. Senderichin,
A. Ioffe,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1989)
卷期:
Volume 111-112,
issue 1-2
页码: 263-272
ISSN:1042-0150
年代: 1989
DOI:10.1080/10420158908213001
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The photoconductivity of semiconductors was considered under the following general conditions: the surface recombination velocity was not equal to zero, the space charge near the surface is taken into account, the value of absorption coefficient was not limited. Solving both the continuity and Poisson equations for an illuminated thick specimen, we obtained a solution which suggests a new combined measurement in order to determine various optical constants. The absorption coefficient and the diffusion length of electrons in CZ grownn-type Si (Na= 1012-1013cm−3) were measured at room temperature, using the new technique.
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