Preparation and characterization of amorphous SiC:H thin films
作者:
M. P. Delplancke,
J. M. Powers,
G. J. Vandentop,
M. Salmeron,
G. A. Somorjai,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1991)
卷期:
Volume 9,
issue 3
页码: 450-455
ISSN:0734-2101
年代: 1991
DOI:10.1116/1.577431
出版商: American Vacuum Society
关键词: SILICON CARBIDES;SILANES;FILMS;AMORPHOUS STATE;CHEMICAL VAPOR DEPOSITION;PLASMA;CHEMICAL COMPOSITION;MORPHOLOGY;PHOTOELECTRON SPECTROSCOPY;X RADIATION;AUGER ELECTRON SPECTROSCOPY;SCANNING ELECTRON MICROSCOPY;RAMAN SPECTRA;SiC:H
数据来源: AIP
摘要:
Silicon carbide films were deposited by plasma enhanced chemical vapor deposition utilizing monomethylsilane (CH3SiH3). Silicon (100) and polycrystalline gold were used as substrates. A mass spectrometric analysis of the monomethylsilane plasma showed that the majority of the Si–C bonds were preserved in the gas phase. The composition, the density and morphology of the amorphous SiC:H (a:SiC:H) films were studied as a function of substrate temperature, composition of the ion flux bombarding the surface and the kinetic energy of these ions. The surface science techniques utilized for these investigations include x‐ray photoelectron spectroscopy, Auger electron spectroscopy, scanning electron microscopy, Fourier transform infrared, and Raman spectroscopies.
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