Localized excitonic transitions in aZnSe-Zn0.75Cd0.25Sedouble-superlattice grown by molecular beam epitaxy
作者:
Z. P. Guan,
G. K. Kuang,
E. Griebl,
M. Kastner,
W. Gebhardt,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 14
页码: 1688-1690
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121153
出版商: AIP
数据来源: AIP
摘要:
A group of well-defined exciton transitions from the localized states were observed inZnSe-Zn0.75Cd0.25Sedouble-superlattice structure. The photoluminescence and photoreflectance have been employed to study the subband transitions at low temperatures. At 1.4 K, except the two ground states and two higher subbands ofn=1light-hole andn=2heavy-hole excitonic transitions, other four peaks (A, B, C, and D) also were observed in wider-well superlattice. Those peaks were attributed to the excitonic transitions fromn=2heavy-hole subband due to the fluctuation of well-barrier interface. Another localized excitonic transition from narrower-well superlattice appeared as increasing the modulated intensity in photoreflectance spectra. ©1998 American Institute of Physics.
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