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Localized excitonic transitions in aZnSe-Zn0.75Cd0.25Sedouble-superlattice grown by molecular beam epitaxy

 

作者: Z. P. Guan,   G. K. Kuang,   E. Griebl,   M. Kastner,   W. Gebhardt,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 14  

页码: 1688-1690

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121153

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A group of well-defined exciton transitions from the localized states were observed inZnSe-Zn0.75Cd0.25Sedouble-superlattice structure. The photoluminescence and photoreflectance have been employed to study the subband transitions at low temperatures. At 1.4 K, except the two ground states and two higher subbands ofn=1light-hole andn=2heavy-hole excitonic transitions, other four peaks (A, B, C, and D) also were observed in wider-well superlattice. Those peaks were attributed to the excitonic transitions fromn=2heavy-hole subband due to the fluctuation of well-barrier interface. Another localized excitonic transition from narrower-well superlattice appeared as increasing the modulated intensity in photoreflectance spectra. ©1998 American Institute of Physics.

 

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