High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular‐beam epitaxy
作者:
W. E. Hoke,
P. S. Lyman,
W. H. Labossier,
S. K. Brierley,
H. T. Hendriks,
S. R. Shanfield,
L. M. Aucoin,
T. E. Kazior,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 3
页码: 1066-1069
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586078
出版商: American Vacuum Society
关键词: JUNCTION TRANSISTORS;MOLECULAR BEAM EPITAXY;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;INDIUM ARSENIDES;FABRICATION;PERFORMANCE TESTING;(AlGa)As;(InGa)As
数据来源: AIP
摘要:
Double pulse doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors have been grown by molecular‐beam epitaxy on GaAs substrates. Hall mobilities in excess of 7100 cm2/V s at 300 K and 25 000 cm2/V s at 77 K are obtained with a sheet density of 3×1012cm−2. Photoluminescence measurements indicate that two electronic subbands are occupied, and the subband energies are determined. The doping pulses are resolved in secondary ion mass spectrometry measurements. Using a double recess process, transistors have been fabricated that have produced state of the art microwave performance. At 10 GHz a 1.2 mm device has simultaneously achieved a power added efficiency of 70%, output power of 0.97 W, and gain of 10 dB.
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