Using e-beam lithography and conventional double-angle evaporation, we have fabricatedAl–Al2O3–Alsingle-electron transistors and studied their behavior from 85 mK to about 5 K. The total island capacitanceC&Sgr;of the devices ranges from 120 to 200 aF, with typical estimated junction overlaps of about30 nm×30 nm.At 4.2 K, our devices display well-behaved periodicI–Vgcharacteristics with the maximum charge-transfer function∂I/∂Q0ranging from 4 to 130 pA/e. The electrical characteristics of these devices agree well with the predictions of the Orthodox Theory, with current modulation being observed up to a temperatureT≃e2/(2C&Sgr;kB).Below 1 K small deviations occur, which are partly due to island self-heating effects. ©1998 American Institute of Physics.