Growth of GaAs by switched laser metalorganic vapor phase epitaxy
作者:
Atsutoshi Doi,
Yoshinobu Aoyagi,
Susumu Namba,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 26
页码: 1787-1789
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96787
出版商: AIP
数据来源: AIP
摘要:
Crystal growth of GaAs by switched laser metalorganic vapor phase epitaxy (SL MOVPE) is reported. This growth technique is achieved by combining laser MOVPE and atomic layer epitaxy. The growth process in SL MOVPE can be explained by a model which assumes that trimethylgallium adsorbed on the crystal surface is decomposed in a photocatalytic reaction and that the decomposition rate depends on the surface species present on the substrate.
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