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Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal–organic vapor phase epitaxy on sapphire substrates

 

作者: Lisen Cheng,   Ze Zhang,   Guoyi Zhang,   Dapeng Yu,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 71, issue 25  

页码: 3694-3696

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120484

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Twinning was observed in a GaN buffer layer. The twin boundaries in the buffer layer can extend into the epitaxial layer to form domain boundaries during growth of the epilayer. The domain boundaries, which initiated from the twin boundaries in the buffer layer, are determined to be inversion domain boundaries. ©1997 American Institute of Physics.

 

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