Conduction band discontinuities in Ga0.5In0.5P‐AlxGa0.5−xIn0.5P heterojunctions measured by internal photoemission
作者:
H. K. Yow,
P. A. Houston,
M. Hopkinson,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 21
页码: 2852-2854
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113451
出版商: AIP
数据来源: AIP
摘要:
The conduction band discontinuities in Ga0.5In0.5P‐AlxGa0.5−xIn0.5P heterojunctions, lattice matched to GaAs and grown by molecular beam epitaxy, were measured by internal photoemission techniques at room temperature over the whole compositional range. The discontinuity is found to vary linearly inxas (0.59x)eV forx≤0.30 and as (−0.18x+0.23)eV forx≳0.30, whereas the inferred valence band discontinuity (band‐gap difference minus the conduction band discontinuity) varies as (0.61x)eV. The direct–indirect gap crossover composition in AlxGa0.5−xIn0.5P is found to be close tox≊0.3. ©1995 American Institute of Physics.
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