Spectroscopy study of copper impurities in silicon
作者:
C.S. Chen,
J.C. Corelli,
期刊:
Journal of Applied Physics
(AIP Available online 1973)
卷期:
Volume 44,
issue 12
页码: 5622-5623
ISSN:0021-8979
年代: 1973
DOI:10.1063/1.1662209
出版商: AIP
数据来源: AIP
摘要:
Infrared spectroscopy has been used to study copper impurities in irradiated and unirradiated silicon. No Cu‐associated bands are observed before or after neutron irradiation of the copper‐diffused samples. The presence of Cu impurities in Si does not affect the production of divacancy defects, implying no interaction of Cu with radiation‐induced defects.
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