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Thermally stable AuGe–Au ohmic contacts for single doped InP high electron mobility transistor structures

 

作者: R. A. McTaggart,   K. Y. Hur,   P. J. Lemonias,   W. E. Hoke,   L. M. Aucoin,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 1  

页码: 163-165

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.587977

 

出版商: American Vacuum Society

 

关键词: HETEROSTRUCTURES;OHMIC CONTACTS;INDIUM PHOSPHIDES;IRON ADDITIONS;TERNARY COMPOUNDS;ALUMINIUM ARSENIDES;INDIUM ARSENIDES;BINARY ALLOYS;GOLD BASE ALLOYS;GERMANIUM ALLOYS;GOLD;THERMODYNAMIC PROPERTIES;ELECTRIC CONDUCTIVITY;InP:Fe;(Al,In)As;(Au,Ge);Au

 

数据来源: AIP

 

摘要:

Optimization of thermally stable ohmic contacts to single doped, InP high electron mobility transistor (HEMT) structures was performed using AuGe–Au. Pulse doped and uniformly doped lattice matched HEMT structures were utilized to investigate the effects of doping profiles on contact resistance,Rc. The lowest contact resistance was obtained on pulse doped structures (Rc<0.1 Ω mm). Uniformly doped structures yieldedRc<0.2 Ω mm. AuGe–Au contacts were similarly fabricated on pseudomorphic HEMT structures incorporating an Al0.65In0.35As Schottky layer to monitor the change inRcresulting from the increase in band gap discontinuity. The use of a pseudomorphic Schottky layer resulted inRcof ≳0.3 Ω mm.

 

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