The lattice sites of As ions implanted in diamond and the annealing of implantation damage were investigated in emission channeling measurements. A dose of 1.0×1013cm−273Se ions was implanted into IIa diamond at 300 K with an energy of 60 keV.73Se (t12=7.1 h) decays to73As (t1/2=80 d), which in turn decays to excited states in73Ge. Channeling effects were measured on conversion electrons emitted in the73Ge decay. Annealing studies in the range 873–1673 K showed an annealing stage of the implantation damage setting in at 1100 K. Comparison of the measured effects with simulations based on the dynamical theory of electron diffraction showed that after annealing at temperatures above 1100 K, 55(5)% of the implanted ions were located on substitutional lattice sites. ©1995 American Institute of Physics.