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Preparation of SrBi2(Ta, Nb)2O9thin films by rf sputtering for ferroelectric memory production

 

作者: Takeshi Masuda,   Yusuke Miyaguchi,   Koukou Suu,   Shan Sun,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 2000）
卷期: Volume 31, issue 1-4  

页码: 23-33

 

ISSN:1058-4587

 

年代: 2000

 

DOI:10.1080/10584580008215637

 

出版商: Taylor & Francis Group

 

关键词: SBTN;ferroelectric thin film;rf magnetron sputtering;process stability;uniformity;compositional control

 

数据来源: Taylor

 

摘要:

Ferroelectric SrBi2(Ta, Nb)2O9(SBTN) thin films were prepared by rf magnetron sputtering utilizing a multi-chamber type production tool (ULVAC CERAUS ZX1000). Accurate and dynamic compositional control results in excellent ferroelectric performances such as large 2Pr up to 15μC/cm2, fatigue free at least 109cycles as well as good uniformity and process repeatability. These results indicate that the SBTN sputtering process is promising for ferroelectric memory production.

 

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