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Low temperature metal-organic chemical vapor deposition of Ru thin films as electrode for high dielectric capacitors

 

作者: KyungWoong Park,   YoungKi Han,   Kiyoung Oh,   DooYoung Yang,   ChulJu Hwang,   Jaehoo Park,   CheolSeong Hwang,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 2000）
卷期: Volume 30, issue 1-4  

页码: 45-52

 

ISSN:1058-4587

 

年代: 2000

 

DOI:10.1080/10584580008222252

 

出版商: Taylor & Francis Group

 

关键词: Low temperature MOCVD;Ru;dome type reactor;activation energy

 

数据来源: Taylor

 

摘要:

Low temperature metal-organic chemical vapor deposition (MOCVD) process of Ru films for use as electrode material was studied using a noble dome type reactor, liquid delivery technique and a new precursor. The films were grown at temperatures ranging from 275°C to 480°C in which film growth was controlled by a surface chemical reaction with a small activation energy of 0.21 eV. The root-mean-squared surface roughness was as low as 23 Å for a film grown at 290°C on a SiO2surface.

 

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