Electron mobility inn‐type GaAs at 77 K: Determination of the compensation ratio
作者:
W. Walukiewicz,
J. Lagowski,
H. C. Gatos,
期刊:
Journal of Applied Physics
(AIP Available online 1982)
卷期:
Volume 53,
issue 1
页码: 769-770
ISSN:0021-8979
年代: 1982
DOI:10.1063/1.329986
出版商: AIP
数据来源: AIP
摘要:
Electron‐mobility values inn‐type GaAs at 77 K were computed utilizing a variational procedure and taking into account all major scattering mechanisms. Mobility values are tabulated as a function of electron concentrations, providing a convenient means for the determination of the compensation ratio, i.e., the determination of the total concentration of ionized impurities.
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