Undoped single crystalline aluminum nitride films were grown on 4H and 6H SiC substrates using metal–organic chemical-vapor deposition at 1200 °C. Fromin situreflection high-energy electron diffraction, x-ray diffraction rocking curves, and cathodoluminescence spectra, the crystallinity of the films was confirmed. Atomic force microscopy showed that some films were substantially dominated by island growth, rather than step flow growth. Aluminum was evaporated to form metal–insulator–semiconductor (MIS) capacitors for high-frequency capacitance voltage measurements carried out at room temperature. Low leakage made it possible to measure the structures and characterize accumulation, depletion, deep depletion, and, in some cases, inversion. From independent optical thickness measurements, the relative dielectric constant of aluminum nitride was confirmed at 8.4. The flatband voltage of the AlN MIS capacitors onp-type SiC was close to the theoretical value expected. The films were stressed up to 60 V (3 MV/cm) without breakdown, but excessive leakage currents(>0.1 A/cm2),probably dominated by grain-boundary conduction, shifted the flatband voltage of the capacitors. These results indicate the possibility of replacing silicon dioxide with aluminum nitride in SiC field effect transistors using insulated gates. ©1997 American Institute of Physics.