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Semiconductor preionized nitrogen laser

 

作者: K. R. Rickwood,   A. A. Serafetinides,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1986）
卷期: Volume 57, issue 7  

页码: 1299-1302

 

ISSN:0034-6748

 

年代: 1986

 

DOI:10.1063/1.1138592

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The design and performance of semiconductively preionized nitrogen lasers employing optimized capacitor transfer excitation circuitry are described. These lasers of minimum complexity are capable of producing ultraviolet pulses of up to 1 mJ and 150 kW at efficiencies of more than 0.04%.

 

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