Interfacial structures and composition of ultramicrotomed MOCVD formed HgCdTe on GaAs
作者:
S.R. Glanvill,
M.S. Kwietniak,
G.N. Pain,
C.J. Rossouw,
T. Warminski,
L.S. Wielwfński,
I.J. Wilson,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1989)
卷期:
Volume 59,
issue 1
页码: 17-23
ISSN:0950-0839
年代: 1989
DOI:10.1080/09500838908214771
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
We demonstrate the application of ultramicrotome techniques for the preparation of thin semiconductor interfaces in cross-section, for analysis by electron beam techniques. This is of significance for semiconductor device technology, since a specific area on a particular device may be examined in cross-section. High-resolution transmission electron microscopy studies of twinned structures at the interface of a 1.2 μm metal-organic chemical vapour deposited HgCdTe epilayer on {100} GaAs are reported. {100} epitaxial growth starts to dominate about 40 nm from the interface, and continues to the top surface of the epilayer. Energy-dispersive X-ray analysis shows that the mercury concentration within the epilayer increases as the interface is approached. No evidence of diffusion into the GaAs substrate was obtained.
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