Thermal decomposition of bulk and heteroepitaxial (100) InP surfaces: A combinedin situscanning electron microscopy and mass spectrometric study
作者:
Ferenc Riesz,
L. Dobos,
J. Karányi,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 5
页码: 2672-2674
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590254
出版商: American Vacuum Society
关键词: InP
数据来源: AIP
摘要:
The thermal decomposition of bulk and heteroepitaxial (100) InP surfaces is studied byin situscanning electron microscopy combined with mass spectrometry. The onset of P evaporation coincides with the In droplet nucleation at about 480 °C and the major evaporation of phosphorous commences above 510 °C and corresponds to the serious deterioration of the surface. There is no significant difference between bulk and defected (heteroepitaxial InP/GaAs) samples. The relevance to InP technology is discussed.
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