Injection of point defects into Si was examined by deep level transient spectroscopy. Preimplanted samples containing di‐vacancies and O‐vacancy pairs fabricated by low dose, high energy implantation of Ge (∼1×108, cm−2, 1.4 and 6.0 MeV) were used to monitor injection of point defects formed by low energy implants or Pd silicides. It was found that evaporation of Pd on preimplanted Si leads to a significant reduction of both the di‐vacancy and O‐vacancy signals, indicating injection of Si interstitials during the silicide formation. On the other hand low energy implants (52 keV Ge, 1×1013−5×1014cm−2) resulted only in a small reduction of these signals probably due to self‐trapping of the created interstitials, and furthermore prevented the reduction from the silicide formation, due to trapping of the injected interstitials in the damaged layer. ©1996 American Institute of Physics.