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Criterion for blocking threading dislocations by strained buffer layers in GaAs grown on Si substrates

 

作者: N. A. El‐Masry,   J. C. L. Tarn,   S. Hussien,  

 

期刊: Applied Physics Letters  (AIP Available online 1989)
卷期: Volume 55, issue 20  

页码: 2096-2098

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.102094

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An energy model has been used to calculate the minimum critical thickness in strained‐layer superlattices that is required to block threading dislocations. The model calculates the total change in the system energy that results from the presence of a bent dislocation segment at the strained interface. The calculations show that a threading dislocation has to overcome an energy barrier before gliding along the strained‐layer interface becomes favorable. The model predicts that the process of blocking threading dislocations by strained‐layer structures can be thermally activated.

 

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