Low energy electron‐enhanced etching of Si(100) in hydrogen/helium direct‐current plasma
作者:
H. P. Gillis,
D. A. Choutov,
P. A. Steiner,
J. D. Piper,
J. H. Crouch,
P. M. Dove,
K. P. Martin,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 19
页码: 2475-2477
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114000
出版商: AIP
数据来源: AIP
摘要:
Low energy electron‐enhanced etching of Si(100) has been achieved by placing the sample on the anode of a dc discharge in hydrogen/helium mixtures. Over a broad range of gas composition, gas pressure, and discharge current, nonpatterned samples gave etch yields of 0.01–0.02 atoms/electron, and average etch rates of 2000–3000 A˚/min. Postetch examination by atomic force microscopy revealed surface roughness of 2–3 nm. These results are related to incident flux of H atoms and electrons through a simple model of the anode sheath layer above the sample. ©1995 American Institute of Physics.
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