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Some Features in the Valence Band Density of States of Amorphous Ge and Si

 

作者: K. S. Song,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1974)
卷期: Volume 20, issue 1  

页码: 162-166

 

ISSN:0094-243X

 

年代: 1974

 

DOI:10.1063/1.2945952

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A simple model of the electronic density of states predicts that a p‐band in a cubic solid, ordered or otherwise, has a two‐component structure (of weight two and one) in general. In a tetrahedrally bonded solid the VBDS exhibits upto three components. It is found that the reduction by about 10% of the effective s‐p interaction as a consequence of the bond angle distortion is sufficient to bring about the coalescence of the two lower components.

 

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