High mobility hole gas and valence‐band offset in modulation‐dopedp‐AlGaAs/GaAs heterojunctions
作者:
W. I. Wang,
E. E. Mendez,
Frank Stern,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 6
页码: 639-641
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95339
出版商: AIP
数据来源: AIP
摘要:
Modulation‐dopedp‐AlGaAs/GaAs heterojunctions have been grown by molecular beam epitaxy. The effects of undoped AlGaAs spacer thickness on sheet carrier density and on Hall mobility have been investigated. A mobility of 97 000 cm2 V−1 s−1has been obtained at 4.2 K for a sheet density of 1.7×1011cm−2. This is the highest mobility reported for holes in III‐V compound semiconductors. A valence‐band offset of 210±30 meV was deduced for Al0.5Ga0.5As /GaAs heterojunctions.
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