Electronic structure of self-assembled InAs quantum dots in GaAs matrix
作者:
P. N. Brounkov,
A. Polimeni,
S. T. Stoddart,
M. Henini,
L. Eaves,
P. C. Main,
A. R. Kovsh,
Yu. G. Musikhin,
S. G. Konnikov,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 8
页码: 1092-1094
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122094
出版商: AIP
数据来源: AIP
摘要:
Capacitance–voltage characteristics have been measured at various frequencies and temperatures for structures containing a sheet of self-assembled InAs quantum dots in bothn-GaAsandp-GaAsmatrices. Analysis of the capacitance–voltage characteristics shows that the deposition of 1.7 ML of InAs forms quantum dots with electron levels 80 meV below the bottom of the GaAs conduction band and two heavy-hole levels at 100 and 170 meV above the top of the GaAs valence band. The carrier energy levels agree very well with the recombination energies obtained from photoluminescence spectra. ©1998 American Institute of Physics.
点击下载:
PDF
(87KB)
返 回