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Zero‐bias anomaly in GaAs/Mo tunnel junctions

 

作者: B. R. Sood,   Y. L. Pak,  

 

期刊: Journal of Applied Physics  (AIP Available online 1974)
卷期: Volume 45, issue 6  

页码: 2579-2581

 

ISSN:0021-8979

 

年代: 1974

 

DOI:10.1063/1.1663632

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A large zero‐bias anomaly has been observed in the point contact tunnel junctions made between a degeneratep‐type GaAs and Mo. The anomaly corresponds to a resistance peak centered at zero bias. The junction resistance at zero bias is a strong function of temperature, increasing with decreasing temperature. A quantitative study of the voltage and temperature dependence of the zero‐bias anomaly has been made. No effect of the magnetic field up to 12 kG was found. When the temperature was lowered below the transition temperature of Mo, the superconducting energy gap of Mo was observed, which indicated that the mechanism of current flow is by electron tunneling.

 

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