Zero‐bias anomaly in GaAs/Mo tunnel junctions
作者:
B. R. Sood,
Y. L. Pak,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 6
页码: 2579-2581
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663632
出版商: AIP
数据来源: AIP
摘要:
A large zero‐bias anomaly has been observed in the point contact tunnel junctions made between a degeneratep‐type GaAs and Mo. The anomaly corresponds to a resistance peak centered at zero bias. The junction resistance at zero bias is a strong function of temperature, increasing with decreasing temperature. A quantitative study of the voltage and temperature dependence of the zero‐bias anomaly has been made. No effect of the magnetic field up to 12 kG was found. When the temperature was lowered below the transition temperature of Mo, the superconducting energy gap of Mo was observed, which indicated that the mechanism of current flow is by electron tunneling.
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