A new technique is reported in which silicon can be formed to provide transistor action. A suitable impurity is arced at the surface of the silicon causing the impurity to be diffused into a small region. Tests have been carried out usingn‐type andp‐type silicon with various impurities. Initial results indicated voltage gains as high as 75 and power gains between 15 and 60. Other characteristics, such as variations in current multiplication with emitter current, were examined and the mechanism of alpha was compared with the theories developed by Sittner.