High temperature coefficient of resistance in vanadium oxide diodes
作者:
V. A. Kuznetsov,
D. Haneman,
期刊:
Review of Scientific Instruments
(AIP Available online 1997)
卷期:
Volume 68,
issue 3
页码: 1518-1520
ISSN:0034-6748
年代: 1997
DOI:10.1063/1.1147640
出版商: AIP
数据来源: AIP
摘要:
Evidence regarding the high temperature coefficient of resistance (35&percent; per °C) in vanadium oxide multiple thin film diodes has been obtained, indicating that the source is a vanadium oxide substance formed between multiple layers of deposited vanadium. Effects of top contacts are detailed. The devices also show high sensitivity to mechanical pressure. ©1997 American Institute of Physics.
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