Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}
作者:
Tsunenobu Kimoto,
Akira Itoh,
Hiroyuki Matsunami,
Tetsuyuki Okano,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 8
页码: 3494-3500
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365048
出版商: AIP
数据来源: AIP
摘要:
Step bunching in chemical vapor deposition of 6H– and 4H–SiC on off-oriented {0001} faces is investigated with cross-sectional transmission electron microscopy. On an off-oriented (0001)Si face, three Si–C bilayer-height steps are the most dominant on 6H–SiC and four bilayer-height steps on 4H–SiC. In contrast, single bilayer-height steps show the highest probability on a (0001¯)C face for both 6H– and 4H–SiC epilayers grown with a C/Si ratio of 2.0. The increase of C/Si ratio up to 5.0 induces the formation of multiple-height steps even on a C face. The bunched step height corresponds to the unit cell or the half unit cell of SiC. The mechanism of step bunching is discussed with consideration of surface formation processes. ©1997 American Institute of Physics.
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