Analysis of thin CdS layers on InP for improved metal–insulator–semiconductor devices
作者:
Helen M. Dauplaise,
Kenneth Vaccaro,
Andrew Davis,
George O. Ramseyer,
Joseph P. Lorenzo,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 5
页码: 2873-2882
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363139
出版商: AIP
数据来源: AIP
摘要:
Cadmium sulfide (CdS) layers were deposited from an aqueous solution of thiourea, cadmium sulfate, and ammonia on (100)n‐InP at 60–95 °C. X‐ray photoelectron spectroscopy showed that the deposition process effectively removes native oxides on InP and forms a protective layer for subsequent dielectric deposition. Surface analysis also showed that the InP surface is not P deficient following oxide deposition on CdS‐treated InP. Capacitance–voltage and conductance–voltage measurements of metal–insulator–semiconductor (MIS) capacitors were used to compare samples with and without CdS films between InP and a deposited insulator. Capacitance–voltage response of CdS‐treated MIS structures showed well‐defined regions of accumulation, depletion, and inversion. The interface‐state density at midgap was reduced from 5×1011to 6×1010eV−1 cm−2with CdS treatment. Depletion‐mode MIS field‐effect transistors made using this new passivation technique exhibited superior device performance to that of untreated samples.
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