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Junction locations by scanning tunneling microscopy: In‐air‐ambient investigation of passivated GaAspnjunctions

 

作者: Wen F. Tseng,   John A. Dagata,   Rick M. Silver,   Joseph Fu,   Jeremiah R. Lowney,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 1  

页码: 373-377

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587128

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;BINARY COMPOUNDS;P−N JUNCTIONS;STM;ATOMIC FORCE MICROSCOPY;PASSIVATION;CLEAVAGE;ULTRAHIGH VACUUM;PHOSPHORUS SULFIDES;SPATIAL RESOLUTION;GaAs

 

数据来源: AIP

 

摘要:

Scanning tunneling microscopy (STM) and atomic force microscopy operating in air have been used to investigate locations of molecular‐beam epitaxially grown GaAs multiplepnjunctions cleaved and passivated with P2S5. Symmetrically and asymmetrically doped junctions were prepared within topographically delineated AlAs/GaAs marker regions for this in‐air study of electronic junction contrast. Our results indicate that the STM‐delineated junction locations do not coincide with the electrical junction locations, but rather shift into thep‐type regions.  

 

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