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Radiative and nonradiative tunneling processes in silicon

 

作者: A.J. Zakrzewski,   A.M. Frens,   M.T. Bennebroek,   J. Schmidt,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1995）
卷期: Volume 134, issue 1-4  

页码: 79-81

 

ISSN:1042-0150

 

年代: 1995

 

DOI:10.1080/10420159508227187

 

出版商: Taylor & Francis Group

 

关键词: carrier generation-recombination;irradiated silicon

 

数据来源: Taylor

 

摘要:

An excitation transfer among carbon-oxygen and vacancy-oxygen defects in electron irradiated silicon was studied by means of the photo-Electron Spin Echo (photo-ESE) technique. Analysis of the appropriate rate equations enabled us to estimate quantum yield of nonradiative tunneling among (C-O) and (V-O) centers. These processes were found to be several orders of magnitude more efficient than donor-acceptor pair radiative recombination and bound exciton radiative transitions.

 

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