Direct observation of the amphoteric behavior of Ge in InP modified by P co-implantation
作者:
Kin Man Yu,
M. C. Ridgway,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 7
页码: 939-941
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119695
出版商: AIP
数据来源: AIP
摘要:
We have investigated the preferred substitution of Ge in InP by altering the local stoichiometry of the InP substrate. By co-implanting P with Ge to create a group V-rich environment, we directly observed an enhancement of the Ge substituting the In sublattice. A corresponding increase in then-type conductivity by as much as three times was also observed in the Ge and P co-implanted sample. However, due to the altered local stoichiometry, the Ge solubility in InP was reduced by a factor of 2. The residual crystalline damage in the P co-implanted InP after annealing was also decreased due to the compensation of the nonstoichiometry related damage by the excess P in the middle of the implanted region. ©1997 American Institute of Physics.
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