We propose a new trilayer resist system (photoresist/As2S3/polymethyl methacrylate) using spin‐coated As2S3(0.20  &mgr;m thick) as a barrier layer. As2S3has shown high etch rate (more than 30 times) in SF6+4% O2reactive ion etching compared to organic photoresists which allows a precise pattern transfer. The spin coating process of As2S3is compatible with conventional processing. As2S3has high absorption coefficient in ultraviolet and deep UV eliminating substrate reflection. Patterns of micron and submicron dimensions were replicated successfully.