Microstructure of GaN epitaxy on SiC using AlN buffer layers
作者:
F. A. Ponce,
B. S. Krusor,
J. S. Major,
W. E. Plano,
D. F. Welch,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 3
页码: 410-412
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114645
出版商: AIP
数据来源: AIP
摘要:
The crystalline structure of GaN epilayers on (0001) SiC substrates has been studied using x‐ray diffraction and transmission microscopy. The films were grown by metalorganic chemical vapor deposition, using AlN buffer layers. X‐ray diffraction measurements show negligible strain in the epilayer, and a long‐range variation in orientation. Transmission electron lattice images show that the AlN buffer layer consists of small crystallites. The nature of the buffer layer and its interfaces with the substrate and the GaN film is discussed. The defect structure of the GaN film away from the substrate consists mostly of threading dislocations with a density of ∼109cm−2. ©1995 American Institute of Physics.
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