Low pressure metalorganic vapor phase epitaxy of InP using a trimethylindium‐trimethylphosphine adduct source
作者:
M. K. Lee,
D. S. Wuu,
H. H. Tung,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 25
页码: 1805-1807
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97703
出版商: AIP
数据来源: AIP
摘要:
Metalorganic vapor phase epitaxy of InP prepared by a trimethylindium‐trimethylphosphine (TMIn‐TMP) adduct and PH3was first grown in a low pressure vertical reactor. The adduct with its irreplaceable merit of high stability has been successfully used in this study. The lowest carrier concentration of undoped InP epilayers is 5×1014cm−3with a 77 K mobility of 75 000 cm2/V s. The full width at half‐maximum of the 77 K photoluminescence spectrum was as narrow as 10 meV. These results can compete with all previous data from adduct sources. The growth rate was not limited by the relatively low vapor pressure of the TMIn‐TMP adduct and could reach to 8 &mgr;m/h. It suggests the high growth efficiency of this growing process.
点击下载:
PDF
(257KB)
返 回