Critical‐layer thickness of a pseudomorphic In0.8Ga0.2As heterostructure grown on InP
作者:
Munecazu Tacano,
Yoshinobu Sugiyama,
Yukihiro Takeuchi,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 21
页码: 2420-2422
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104890
出版商: AIP
数据来源: AIP
摘要:
A very high electron mobility pseudomorphic In0.8Ga0.2As heterostructure is successfully grown on InP both by the elimination of the overshoot of flux densities and by the precise control of the flux ratio through a new calibration technique of reflection high‐energy electron diffraction oscillations in a molecular beam epitaxy system. The critical‐layer thickness for the pseudomorphic growth of InGaAs on InP is found to follow the energy balance model, and a very high 2DEG mobility of over 1.5 m2/V s and over 15 m2/V s at 293 and 10 K, respectively, is obtained.
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