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EBIC characterization of electrically active defects in (Hg,Cd)Te

 

作者: T. M. Moore,   H. F. Schaake,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1983）
卷期: Volume 1, issue 3  

页码: 1666-1668

 

ISSN:0734-2101

 

年代: 1983

 

DOI:10.1116/1.572252

 

出版商: American Vacuum Society

 

关键词: mercury tellurides;cadmium tellurides;grain boundaries;dislocations;recombination;p−type conductors;recrystallization;scanning electron microscopy;etching;schottky effect

 

数据来源: AIP

 

摘要:

A comparison of low temperature electron beam induced current imaging in the scanning electron microscope and surface defect etch studies has identified subgrain boundaries and isolated dislocations as electrically active recombination centers inp‐type solid state recrystallized (Hg1−X,CdX)Te withX=0.3. The ‘‘spotty’’ appearance of these images is attributed to enhanced recombination at Te‐rich precipitates decorating dislocations in the subgrain boundaries.

 

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