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On the Nature of Dislocation Etch Pits in Tungsten

 

作者: Ivan Berlec,  

 

期刊: Journal of Applied Physics  (AIP Available online 1962)
卷期: Volume 33, issue 1  

页码: 197-202

 

ISSN:0021-8979

 

年代: 1962

 

DOI:10.1063/1.1728484

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Some details on dislocation etch pits in tungsten are presented. Etch pits are produced electrolytically with 2% NaOH solution and the Millner‐Sass reagent, and chemically with a potassium ferricyanide etchant. All three etchants can reveal dislocations, but only on certain crystallographic planes. In addition to etch pits, pyramids are produced on octahedral, or nearly octahedral planes. These pyramids do not seem to be related to dislocations. There is no guarantee that all pits correspond to dislocations since impurities, such as carbon, markedly affect the size, shape, and density of etch pits. It was observed that the density of etch pits depends also on the current density during electrolytic etching.

 

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