Deep‐level transient spectroscopy (DLTS) has been used to determine the activation energy and spatial distribution of the electron traps introducedn‐type silicon implanted with 5×1010Se ions/cm2at 800 keV. Radiation damage levels were demonstrated to be present up to a 600 °C anneal. After 700 °C anneal, two deep levels were found atEc−0.225 eV andEc−0.485 eV. The in‐depth distributions of theEc−0.225 eV level after 600 °C anneal and of the two levels after the 700 °C anneal were determined. So, it was found that selenium is a fast diffuser and that each implanted Se ion forms one trap with two levels.