Behavior of indium on the Si(111)7×7 surface at low‐metal coverage
作者:
J. Nogami,
Sang‐il Park,
C. F. Quate,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 4
页码: 1479-1482
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584200
出版商: American Vacuum Society
关键词: SURFACE STRUCTURE;SURFACE RECONSTRUCTION;SILICON;INDIUM;PHASE BOUNDARIES;ATOM TRANSPORT;DIFFUSION;SEGREGATION;Si
数据来源: AIP
摘要:
We have used scanning tunneling microscopy to study the behavior of indium on the Si(111)7×7 surface at low‐metal coverages. At sufficiently low densities, In atoms replace Si in the 7×7 adatom positions, preserving the 7×7 structure. In this case the In atoms have a tendency to occupy positions along the edges of the unit cell rather than adjacent to the corner holes. Agglomeration of higher In densities around atomic steps can lead to local areas of √3×√3 reconstruction. Examination of a phase boundary between 7×7 and √3×√3 allows the identification of the bonding site of the In adatoms in the √3×√3 structure as the threefold symmetric site above a second layer Si atom in the surface Si double layer.
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