Etch rates of tantalum in tetrafluoromethane‐oxygen and hexafluoroethane‐oxygen rf glow discharges were measuredinsituas functions of pressure, reactor residence time, temperature, and applied plasma power. A dramatic increase in the etch rate was observed as the pressure increased. In addition, two distinct temperature regimes occurred in Arrhenius plots. Such data suggest strong effects due to heat of reaction in the Ta/CF4‐O2etch system. The observed etch‐rate pressure dependence can be explained by assuming first‐order kinetics for the reaction of fluorine atoms with tantalum. Evidence for etch‐rate quenching at high pressures due to an increase in the deposition of an inhibiting fluorocarbon surface layer is presented.