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The application of the helicon source to plasma processing

 

作者: A. J. Perry,   D. Vender,   R. W. Boswell,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1991)
卷期: Volume 9, issue 2  

页码: 310-317

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585611

 

出版商: American Vacuum Society

 

关键词: SEMICONDUCTOR TECHNOLOGY;PLASMA SOURCES;PLASMA DENSITY;HELICON WAVES;SULFUR FLUORIDES;PERFORMANCE;ETCHING;BREAKDOWN

 

数据来源: AIP

 

摘要:

The results of a study of the mode transitions in the helicon source when used in the geometry required for plasma processing are presented. We find that the basic characteristics of high density (>5×1011cm−3in the processing chamber at 500 W) and low plasma potential (∼15 V) are observed in this configuration. The mode transitions can be interpreted in terms of the dispersion relation for the helicon wave. A study of the initial plasma breakdown has also been made and the results have aided in the understanding of the operation of the helicon source during pulsed plasma etching.

 

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