The application of the helicon source to plasma processing
作者:
A. J. Perry,
D. Vender,
R. W. Boswell,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 2
页码: 310-317
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585611
出版商: American Vacuum Society
关键词: SEMICONDUCTOR TECHNOLOGY;PLASMA SOURCES;PLASMA DENSITY;HELICON WAVES;SULFUR FLUORIDES;PERFORMANCE;ETCHING;BREAKDOWN
数据来源: AIP
摘要:
The results of a study of the mode transitions in the helicon source when used in the geometry required for plasma processing are presented. We find that the basic characteristics of high density (>5×1011cm−3in the processing chamber at 500 W) and low plasma potential (∼15 V) are observed in this configuration. The mode transitions can be interpreted in terms of the dispersion relation for the helicon wave. A study of the initial plasma breakdown has also been made and the results have aided in the understanding of the operation of the helicon source during pulsed plasma etching.
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