Two state‐of‐the‐art two‐dimensional photon detectors, a high quantum efficiency charge‐coupled device, and a microchannel plate photomultiplier with a position sensitive resistive anode (Mepsicron) have been used to observe spontaneous Raman scattering from multiorder phonon modes of Si in the backscattering geometry. These two detectors and an intensified linear photodiode array are compared using the multiorder spontaneous Raman signal from Si as a weak optical source. An attempt is made to assign the observed Raman scattering peaks in the first‐ through fourth‐order Raman shift regions to known peaks in the density of states of the appropriate Si phonon branches.