A new method for the study of radiative recombination in uniformly doped semiconductors has been developed and applied top‐type gallium arsenide. The bulk quantum efficiency is obtained by measurement of photoluminescence as a function of the penetration length of the exciting radiation. Using an estimated electron mobility, the total recombination lifetime of electrons (minority carriers) is found from this photoluminescence measurement and also independently by the measurement of surface photovoltage. The radiative lifetime is determined from the bulk quantum efficiency and the total electron lifetime. The model on which these measurements are based accounts for the principal factors affecting the intensity of photoluminescence, i.e., bulk quantum efficiency, surface recombination, and refraction and reflection of luminescence at the sample surface. The model is consistent with the experimental data for thep‐type gallium arsenide samples studied.The bulk quantum‐efficiency values obtained here are 8% at 300°K and 28% at 80°K for two higher‐efficiency samples and 6 times lower for a third sample. The radiative lifetime of electrons is found to be approximately 2×10−8sec at 300°K, and 3×10−10sec at 80°K. The total lifetime of electrons (minority carriers) is found to be approximately 1.5×10−9sec at 300°K and 10−10sec at 80°K for the two higher‐efficiency samples, and 10−10sec at both temperatures for the third sample.