The development of a sensitive method for the detection of holes in silver bromide crystals has made possible the study of their properties. The method is based on the destruction of a thin deposit of silver by the bromine formed when photoexcited holes migrate to the surface of a silver bromide crystal. The application of a photographic developer allows the quantitative determination of 1015holes per cm2. Different variants of this method have been applied to measure the lifetime and the drift mobility of photoholes, well as their dependence on the temperature. The diffusion coefficient at room temperature was also evaluated. All results pertaining to the properties of holes in silver bromide seem to fit a unified interpretation if one assumes that free holes generated on exposure are soon neutralized to form rather stable complexes.