Low doses silver with energies between 5 and 25 keV were implanted in a (100) tungsten single crystal. The silver-vacancy complexes remaining after subsequent annealing were studied with thermal helium desorption spectrometry. The results show that the binding energy of one vacancy to substitutional silver is 0.8±0.3 eV, and that additional vacancies are more strongly bound. The binding energy of He to substitutional silver increased with increasing filling degree.