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Ferroelectrics for silicon VLSI

 

作者: Sheng T. Hsu,   Israel H. Kalish,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1992）
卷期: Volume 2, issue 1-4  

页码: 179-195

 

ISSN:1058-4587

 

年代: 1992

 

DOI:10.1080/10584589208215742

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The application of ferroelectrics to EEPROM, nonvolatile SRAMs, and sub-0.5 micron channel length MOS field effect transistors for silicon VLSI can significantly simplify device fabrication process, increase circuit density, and enhance device performance.

 

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